MJE4350

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4350/4351/4352/4353 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE4350 VCBO Collector-base voltage MJE4351 MJE4352 MJE4353 MJE4350 VCEO Collector-emitter voltage MJE4351 MJE4352 MJE4353 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -160 -100 -120 -140 -160 -7 -16 -20 -5 125 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE4350 MJE4351 MJE4352 MJE4353 ICEX ICBO IEBO hFE-1 hFE-2 COB fT Collector cut-off current Collec...