MJ4034

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·Respectively complement to type MJ4030/4031/4032 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ4033/4034/4035 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ4033 VCBO Collector-base voltage MJ4034 MJ4035 MJ4033 VCEO Collector-emitter voltage MJ4034 MJ4035 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 16 20 0.5 150 200 -65~200 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJ4033 VCEO(SUS) Collector-emitter sustaining voltage MJ4034 MJ4035 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage IC=10A; IB=40mA IC=16A; IB=80mA IC=10A ; VCE=3V VCE=30V; IB=0 ICEO Collector cut-off current VCE=40V; IB=0 VCE=50V; IB=0 IEBO hFE Emitter cut-off current DC current gain VEB=5V; IC=0 IC=10A ; VCE=3V IC=0.1A ;IB=0 CONDITIONS www.datasheet4u.com MJ4033/4034/4035 SYMBOL MIN 60 80 100 T...