SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datashee...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3 package www.datasheet4u.com ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,
regulators and switching circuits PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
MJ413
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 400 325 5 10 2 125 -65~150 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCE=400V; VEB(off)=1.5V TC=125 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V;f=1.0MHz 20 15 2.5 MIN 325
www.datasheet4u.com
MJ413
SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICEX IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V
0.8 1.25 0.25 0.5 5.0 80
V V mA mA
MHz...