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NE600

NXP Semiconductors

1GHz LNA and mixer

Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION The NE/SA600 is a combined low ...


NXP Semiconductors

NE600

File Download Download NE600 Datasheet


Description
Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION The NE/SA600 is a combined low noise amplifier (LNA) and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise www.datasheet4u.com figure at 900MHz with 16dB gain and an IM3 intercept of -10dBm at the input. Input and output impedances are 50Ω and the gain is stabilized by on-chip compensation to vary less than ±0.5dB over the -40 to +85°C temperature range. The wide-dynamic-range mixer has a 14dB noise figure and IM3 intercept of +6dBm at the input at 900MHz. Mixer input impedance is 50Ω with an open-collector output. The chip incorporates an option so the LNA can be disabled and replaced by a through connection. The amplifier IM3 intercept increases to +26dBm in this mode; thus, large signals can be handled. The nominal current drawn from a single 5V supply is 13mA and 4.2mA in the LNA thru mode. PIN CONFIGURATION D Package 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC GNDB RF INA GNDA1 BYPASS GNDLO LOIN VCCMX IFOUT GNDMX RF INMX GNDA2 RF OUTA ENABLE Low current consumption: 13mA nominal, 4.2mA in the LNA thru mode FEATURES SR00082 Figure 1. Pin Configuration Excellent noise figure: 2dB for the amplifier and 14dB for the mixer at 900MHz APPLICATIONS Excellent gain stability versus temperature Switchable overload capability Amplifier matched to 50Ω Mixer input matched to 50Ω Oscillator input matched...




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