SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datas...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage ·Fast switching APPLICATIONS ·General purpose switching ·Switch mode power supplies ·Electronic ballasts for fluorescent lighting
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BUV46 BUV46A
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO PARAMETER Collector-base voltage BUV46 BUV46A Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25 BUV46 BUV46A Open collector Open base CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 3 70 150 -65~150 V A A W V UNIT V
VCEO VEBO IC IB Ptot Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUV46 IC=0.1A ;IB=0 BUV46A BUV46 BUV46A BUV46 BUV46A BUV46 BUV46A IC=2.5A ;IB=0.5A CONDITIONS
www.datasheet4u.com
BUV46 BUV46A
SYMBOL
MIN 400
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 450
VCEsat-1
Collector-emitter saturation voltage
1.5 IC=2A ;IB=0.4A IC=3.5A ;IB=0.7A 5.0 IC=3A ;IB=0.6A IC=2.5A; IB=0.5A 1.3 IC=2A; IB=0.4A VCE =VCEX; RBE =10 TC=125 VCE =VCEX ;VBE = -2.5 V TC=125 VEB=7V; IC=0 0.1 1.0 0.3 2.0 1.0
V
VCEsat-2
Collector-emitt...