SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV26
www.datasheet4u.com
DESCRIPTION ·W...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BUV26
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching
regulators and motor control
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 90 7 14 25 4 6 85 150 -65~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 1.92 UNIT K/W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www.datasheet4u.com
BUV26
SYMBOL
MAX
UNIT
VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO
Collector-emitter sustaining voltage
IC=0.2 A ;IB=0;L=25mH IC=6A ;IB=0.6 A IC=12A; IB=1.2A IC=6A ;IB=0.6 A IC=12A; IB=1.2A
90
V
Collector-emitter saturation voltage
0.6
V
Collector-emitter saturation voltage
1.5
V
Base-emitter saturation voltage
1.2
V
Base-emitter saturation voltage
2.0
V...