BUH517D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH517D www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors. ·Switching power supplies for TV’s and monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature tp<5ms TC=25 tp<5ms Open emitter Open base Open collector CONDITIONS VALUE 1700 700 10 8 15 5 8 60 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA; IB=0 IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1700V; VBE=0 Tj=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IF=5A 8 6 MIN 700 www.datasheet4u.com BUH517D SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF TYP. MAX...