BUT11

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT11 BUT11A Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT11 BUT11A BUT11 BUT11A CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 10 2 Tmb425 100 0.8 150 -65~150 UNIT V VCEO VEBO IC ICM IB Ptot Tf Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Fall time Junction temperature Storage temperature Open base Open collector V V A A A W µs THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT11 IC=0.1A; IB=0, L=25mH BUT11A BUT11 BUT11A BUT11 BUT11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUT11 BUT11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.3 IC=2.5A; IB=0.5A VCE=Rated VCES ;VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 1.0 2.0 10 35 35 V VBEsat Base-emitter saturation volt...