SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2727AW
www.datasheet4u.com
DESCRIPTION...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BU2727AW
www.datasheet4u.com
DESCRIPTION ·With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 825 7.5 12 30 12 25 125 150 -65~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
BU2727AW
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
825
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.91A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=0.91A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0
0.95 1.0 2.0 1.0
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
22
hFE-2
DC current gain
IC=5A ; VCE=1V
5...