BDV67A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDV66/66A/66B/66C/66D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in audio output stages and general amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV67/67A/67B/67C/67D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV67 BDV67A VCBO Collector-base voltage BDV67B BDV67C BDV67D BDV67 BDV67A VCEO Collector-emitter voltage BDV67B BDV67C BDV67D VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 140 160 60 80 100 120 150 5 16 20 0.5 200 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV67 BDV67A V(BR)CEO Collector-emitter breakdown voltage BDV67B BDV67C BDV67D VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 CC VF ton toff Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector capacitance Diode forward voltage Turn-on time Turn-off time IC=10A ,IB=40mA IC=10A ; V...