isc Silicon NPN Power Transistors
BDT81F/83F/85F/87F
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Em...
isc Silicon
NPN Power
Transistors
BDT81F/83F/85F/87F
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F
·Complement to Type BDT82F/84F/86F/88F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT81F
60
BDT83F
80
VCBO
Collector-Base Voltage
BDT85F
100
BDT87F
120
BDT81F
60
VCEO
Collector-Emitter Voltage
BDT83F
80
BDT85F
100
BDT87F
120
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Current
4
PC
Collector Power Dissipation TC=25℃
36
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc website:www.iscsemi.com
MAX UNIT 6 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
BDT81F/83F/85F/87F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT81F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT83F BDT85F
IC= 30mA; IB= 0
VCE(sat)-1 VCE(sat)-2 VBE(on)
BDT87F
Collector-Emitter Voltage
Collector-Emitter Voltage
Saturation Saturation
Base-Emitter On Voltage
IC...