BDT87

isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT81 60 BDT83 80 VCBO Collector-Base Voltage V BDT85 100 BDT87 120 BDT81 60 VCEO Collector-Emitter Voltage BDT83 80 V BDT85 100 BDT87 120 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 4 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT83 BDT85 IC= 30mA; IB= 0 BDT87 VCE(sat)-1 VCE(sat)-2 VBE(on) ICES Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base...