JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
www.datasheet4u.com
SOT-89 T...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate
Transistors
www.datasheet4u.com
SOT-89
TRANSISTOR (
NPN)
1. BASE
2SD965A
FEATURES z Audio amplifier z Flash unit of camera z Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
2. COLLECTOR
1
3. EMITTER
2 3
Value 40 30 7 5 750 150 -55-150
Units V V V A mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE’(2) hFE(3) Collector-emitter saturation voltage Transition frequency Out capacitance VCE(sat) fT Cob Test conditions MIN 40 30 7 0.1 0.1 200 230 150 1 150 50 V MHz pF 800 TYP MAX UNIT V V V μA μA
IC=0.1mA, IE=0 IC= 1mA. IB=0 IE= 10μA, IC=0 VCB= 10V,IE=0 VEB=7V, IC=0 VCE= 2 V, IC=1mA VCE= 2V, IC = 500mA VCE= 2V, IC =2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20 V , IE=0, f=1MHZ
CLASSIFICATION OF
Rank Range
hFE(2)
Q 230-380 R 340-600 S 560-800
Typical Characteristics
2SD965A
www.datasheet4u.com
...
