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BD312 Dataheets PDF



Part Number BD312
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BD312 DatasheetBD312 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD311 APPLICATIONS ·Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-.

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD311 APPLICATIONS ·Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -10 -20 -4 115 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.52 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ; IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A IC=-5A ;VCE=-4V VCB=rated;IE=0 VEB=-7V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V,f=1MHz 25 5 4 MIN -60 TYP. www.datasheet4u.com BD312 SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V -1.0 -1.8 -1.5 -1.0 -1.0 V V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE www.datasheet4u.com BD312 Fig.2 Outline dimensions 3 .


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