RF POWER AMPLIFIER MODULE RF POWER AMPLIFIER MODULE
S−AV38
TOSHIBA RF POWER AMPLIFIER MODULE
S−AV38
www.datasheet4u.com
○RF POWER AMPLIFIER MODULE for VHF BAND ·for digit...
Description
S−AV38
TOSHIBA RF POWER AMPLIFIER MODULE
S−AV38
www.datasheet4u.com
○RF POWER AMPLIFIER MODULE for VHF BAND ·for digital use
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
CHARACTERISTIC DC Supply Voltage DC Supply Voltage Input Power Operating Case Temperature Range Storage Temperature Range SYMBOL VDD VGG Pi Tc (opr) Tstg RATING 17 7 17 −30~100 −40~110 UNIT V V dBmW ℃ ℃
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
PACKAGE OUTLINE
Unit in mm
φ3±0.1 2.2 +0.15/-0.1
26.6±0.1
⑤
+0.2 6.5 ±0.65 ±0.65 ±0.65
①
② ③④
+0.2
±0.65
1. RF INPUT 2. VGG 3. VDD 4. RF OUTPUT 5. GROUND (FLANGE) JEDEC JEITA TOSHIBA Weight:3.5g 5-23F
1
2007-11-01
S−AV38
ELECTRICAL CHARACTERISTICS (Tc = 25℃, ZG = 50Ω)
CHARACTERISTIC Frequency Range SYMBOL frange Po TEST CONDITION — VDD = 7.2V, Po=35dBmW(Pi=adjust) IDD=1.7A(VGG = adjust) , ZL = 50Ω After that Pi = 15dBmW Input Power Gate Bias Voltage Pi VGG IGGBias VDD = 7.2V, IDD = 1.7A (VG...
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