DatasheetsPDF.com

S-AV38

Toshiba Semiconductor

RF POWER AMPLIFIER MODULE RF POWER AMPLIFIER MODULE

S−AV38 TOSHIBA RF POWER AMPLIFIER MODULE S−AV38 www.datasheet4u.com ○RF POWER AMPLIFIER MODULE for VHF BAND ·for digit...


Toshiba Semiconductor

S-AV38

File Download Download S-AV38 Datasheet


Description
S−AV38 TOSHIBA RF POWER AMPLIFIER MODULE S−AV38 www.datasheet4u.com ○RF POWER AMPLIFIER MODULE for VHF BAND ·for digital use ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) CHARACTERISTIC DC Supply Voltage DC Supply Voltage Input Power Operating Case Temperature Range Storage Temperature Range SYMBOL VDD VGG Pi Tc (opr) Tstg RATING 17 7 17 −30~100 −40~110 UNIT V V dBmW ℃ ℃ Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). PACKAGE OUTLINE Unit in mm φ3±0.1 2.2 +0.15/-0.1 26.6±0.1 ⑤ +0.2 6.5 ±0.65 ±0.65 ±0.65 ① ② ③④ +0.2 ±0.65 1. RF INPUT 2. VGG 3. VDD 4. RF OUTPUT 5. GROUND (FLANGE) JEDEC JEITA TOSHIBA Weight:3.5g 5-23F 1 2007-11-01 S−AV38 ELECTRICAL CHARACTERISTICS (Tc = 25℃, ZG = 50Ω) CHARACTERISTIC Frequency Range SYMBOL frange Po TEST CONDITION — VDD = 7.2V, Po=35dBmW(Pi=adjust) IDD=1.7A(VGG = adjust) , ZL = 50Ω After that Pi = 15dBmW Input Power Gate Bias Voltage Pi VGG IGGBias VDD = 7.2V, IDD = 1.7A (VG...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)