SSS70N10A

www.datasheet4u.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Ο SSS70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 28 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 28 19.8 1 O Ο Units V A A V mJ A mJ V/ns W W/ C Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Ο 220 + _ 20 1568 28 4.9 6.5 49 0.32 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο C 300 Thermal Resistance Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.09 62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation SSS70N10A Electrical www.datasheet4u.com Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Ο N-CHANNEL POWER MOSFET Characteristics (TC=25 C unless otherwise specified) Characteristic Min. Typ. Max. Units 100 -2.0 -...