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S93VP463

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(S93VP462 / S93VP463) Voltage Sense Write Protected Memory

S93VP462/S93VP463 VOLTAGE-SENSE™ Write Protected Memory www.datasheet4u.com FEATURES • Voltage-Sense Write Protection —...


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S93VP463

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S93VP462/S93VP463 VOLTAGE-SENSE™ Write Protected Memory www.datasheet4u.com FEATURES Voltage-Sense Write Protection — Low VCC Write Lockout — All Writes Inhibited when VCC < VTRIP — Protects Against Inadvertent Writes During - Power-up - Power-down - Brown-out Conditions — All Devices ‘Readable’ from 1.8V to 5.5V - User Selectable VTRIP Levels Memory — 1K-bit Microwire Memory — S93VP462 – Internally Ties ORG Low – 100% Compatible with All 8-bit Implementations – Sixteen Byte Page Write Capability — S93VP463 – Internally Ties ORG High – 100% Compatible With all 16-bit Implementations – Eight Word Page Write Capability APPLICATIONS New designs for applications where data corruption cannot be permitted. Replacement of existing industry standard 1K memories. OVERVIEW The S93VP462 and S93VP463 are voltage monitoring memory devices that write protect the array from inadvertent writes whenever VCC is below VTRIP. Both devices have 1k-bits of E2PROM memory that is accessible via the industry standard microwire bus. The S93VP462 is configured with an internal ORG pin tied low providing a 8-bit byte organization and the S93VP463 is configured with an internal ORG pin tied high providing a 16-bit word organization. Both the S93VP462 and S93VP463 have page write capability. The devices are designed for a minimum 1,000,000 program/erase cycles and have data retention in excess of 100 years. BLOCK DIAGRAM I VCC 8 + VTRIP GND 5 - RESET PULSE GENERATOR CS 1 SK 2 DI 3 MODE DECODE ...




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