BD236

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD233/235/237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD234 -45 VCBO Collector-Base Voltage BD236 -60 V BD238 -100 BD234 -45 VCEO Collector-Emitter Voltage BD236 -60 V BD238 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD234 -45 BD236 -60 V BD238 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 A 25 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD234 -45 VCEO(SUS) Collector-Emitter Sustaining Voltage BD236 IC= -50mA ; IB= 0 -60 V BD238 -80 VCE(sat) Collector-Emitter Satura...