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SGB10N60 Dataheets PDF



Part Number SGB10N60
Manufacturers Infineon Technologies Corporation
Logo Infineon Technologies Corporation
Description Fast S-igbt in Npt-technology
Datasheet SGB10N60 DatasheetSGB10N60 Datasheet (PDF)

SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E Type SGP10N60 SGB10N60 SGW10N60 Maximum Ratings Parameter VCE 600V IC 10A VCE.

  SGB10N60   SGB10N60


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SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E Type SGP10N60 SGB10N60 SGW10N60 Maximum Ratings Parameter VCE 600V IC 10A VCE(sat) 2.2V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234 Symbol VCE IC Value 600 21 10.9 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55...+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Symbol Conditions Max. Value Unit Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.2 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2 2.2 4 6.7 580 70 50 64 7 13 100 max. 2.4 2.7 5 Unit V µA 40 1500 100 696 84 60 83 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 0 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, T j ≤ 15 0 ° C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 1) 2 2 Mar-00 SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Symbol Conditions Value min. typ. 29 21 233 49 0.20 0.17 0.370 max. 35 25 280 59 0.230 0.221 0.451 mJ Unit Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Ω , Energy losses include “tail” and diode reverse recovery. ns Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Ω Energy losses include “tail” and diode reverse recovery. 29 21 266 63 0.297 0.28 0.577 35 25 319 76 0.342 0.364 0.706 mJ ns Symbol Conditions Value min. typ. max. Unit 3 Mar-00 SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Ic t p =5 µ s 50A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A 10A 15 µ s 30A 50 µ s T C =80°C 20A T C =110°C 10A 200 µ s 1A 1ms Ic DC 0.1A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 120W 25A 100W 20A 80W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 15A 60W 10A 40W 20W 5A 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Mar-00 SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 35A 30A 25A VGE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V 35A 30A 25A VGE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT .


SGP10N60 SGB10N60 SGW10N60


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