Document
T2N4401
Low Power Bipolar Transistors
www.DataSheet4U.com
Features:
• NPN Silicon Planar Epitaxial Transistors. • General purpose Switching Applications.
TO-92 Plastic Package
Dimensions A B C D E F G H K L
Minimum 4.32 4.45 3.18 0.41 0.35 5° 1.14 12.70 1.982
Maximum 5.33 5.20 4.19 0.55 0.50
1.40 1.53 2.082
Dimensions : Millimetres
Pin Configuration 1 = Emitter 2 = Base 3 = Collector
Page 1
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
www.DataSheet4U.com
Absolute Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Rth Rth
(j-c) (j-a)
Symbol VCEO VCBO VEBO IC
T2N4401 40 60 6 600 625 5.0 1.5 12 -55 to +150
Unit
V
mA mW mW/°C W W/°C °C
PD
Tj, Tstg
83.3 °C/W 200
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Characteristic Collector Emitter Voltage IC = 1mA, IB = 0 Collector Base Voltage IC = 100µA, IE = 0 Emitter Base Voltage IE = 100µA, IC = 0 Base Cut off Current VCE = 35V, VEB = 0.4V Collector Cut off Current VCE = 35V, VEB = 0.4V Collector Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA *Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0% Symbol BVCEO* BVCBO BVEBO IBEV <0.1 ICEX <0.4 <0.75 V VBE (Sat)* 0.75 - 0.95 <1.2 µA T2N4401 >40 >60 >6 V Unit
VCE (Sat)*
Page 2
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Characteristic DC Current Gain IC = 0.1mA, VCE = 1V IC = 1mA, VCE = 1V IC = 10mA, VCE = 1V IC = 150mA, VCE = 1V* IC = 500mA, VCE = 2V* Dynamic Characteristics Small Signal Current Gain IC = 1mA, VCE = 10V, f = 1KHz Input Impedance IC = 1mA, VCE = 10V, f = 1KHz Characteristic Voltage Feedback Ratio IC = 1mA, VCE = 10V, f = 1KHz Output Impedance IC = 1mA, VCE = 10V, f = 1KHz Collector-Base Capacitance VCB = 5V, IE = 0, f = 100KHz VCB = 10V, IE = 0, f = 140KHz Emitter-Base Capacitance VEB = 0.5V, IC = 0, f = 100kHz Transition Frequency IC = 20mA, VCE = 10V, f = 100MHz Switching Characteristics VCC = 30V, VEB = 2V IC = 150mA, IB1 = 15mA Delay Time Rise Time VCC = 30V, IC = 150mA IB1 = IB2 = 15mA Storage time Fall Time *Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0% ts tf <225 <30 ns td tr <15 <20 ns hfe hie Symbol hre hoe 40 - 500 1.0 - 15 2N4401 0.1 - 8.0 1.0 - 30 <6.5 pF Ceb <30 kΩ Unit x10-4 µΩ Symbol T2N4401 Unit
hFE
>20 >40 >80 100 - 300 >40
-
Ccb
fT
>250
MHz
Page 3
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
www.DataSheet4U.com
DC Current Gain hFE, DC Current Gain (Normalized)
IC Collector Current (mA) DC Current Gain VCE, Collector-Emitter Voltage (V)
IB Base Current (mA)
On Voltages
Voltage (V)
IC Collector Current .