C3552

Ordering number:EN1597C NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com 2SC3552 800V/12A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 1100 800 7 12 30 6 150 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=10V, IC=0.8A VCB=10V, f=1MHz 10* 8 15 215 MHz pF Conditions Ratings min typ max 10 10 40* Unit µA µA * : The hFE1 of the 2SC3552 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, a...