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SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07
OptiMOS® Power-Transistor
Feature
• N-Channel
Product S...
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SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
75 7.1 80
P- TO220 -3-1
V mΩ A
Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Type SPP80N08S2-07 SPB80N08S2-07 SPI80N08S2-07
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67040-S4263 Q67040-S4264 Q67060-S6082
Marking 2N0807 2N0807 2N0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=60V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
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SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Sta...