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SPB80N04S2L-03 Dataheets PDF



Part Number SPB80N04S2L-03
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet SPB80N04S2L-03 DatasheetSPB80N04S2L-03 Datasheet (PDF)

www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Feature OptiMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO263-3-2 max. SMD version • N-Channel • Enhancement mode • Logic Level •=175°C operating temperature • Avalanche rated • dv/dt rated 40 3.1 80 P-TO220-3-1 V mΩ A Type SPP80N04S2L-03 SPB80N04S2L-03 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4261 Q67040-S4262 Marking 2N04L03 2N04L03 Maximum Ratings,at Tj = 25 °C, unless otherwise specified P.

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www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Feature OptiMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO263-3-2 max. SMD version • N-Channel • Enhancement mode • Logic Level •=175°C operating temperature • Avalanche rated • dv/dt rated 40 3.1 80 P-TO220-3-1 V mΩ A Type SPP80N04S2L-03 SPB80N04S2L-03 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4261 Q67040-S4262 Marking 2N04L03 2N04L03 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C, 1) TC=100°C A 80 80 Pulsed drain current TC=25°C ID puls EAS EAR 320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =80 A , VDD=25V, RGS =25Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C dv/dt VGS Ptot Tj , Tstg Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-06-25 www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Values min. typ. max. Unit Thermal Characteristics Parameter Characteristics Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) RthJC RthJA RthJA - - 0.5 62 62 40 K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Symbol min. Values typ. max. Unit Drain-source breakdown voltage VGS =0V, ID =1mA V(BR)DSS VGS(th) IDSS 40 1.2 1.6 2 V Gate threshold voltage, VGS = VDS ID =250µA Zero gate voltage drain current VDS =40V, VGS =0V, Tj=25°C VDS =40V, VGS =0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 3.5 3.2 2.7 2.4 4.5 4.2 3.4 3.1 Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) - Drain-source on-state resistance VGS =4.5V, ID =80A VGS =4.5V, ID =80A, SMD version Drain-source on-state resistance3) VGS =10V, ID=80A VGS =10V, ID=80A, SMD version RDS(on) - 1Current limited by bondwire; with a R thJC = 0.5 K/W the chip is able to carry ID = 217A and calculated with max. source pin temperature of 85°C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Diagrams are related to straight lead versions Page 2 2001-06-25 www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Values min. typ. 158 5960 1890 460 24 83 60 80 max. 7450 2360 690 36 125 90 120 ns S pF Unit Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =20V, VGS =10V, ID =80A, RG =1.1Ω VDS ≥2*ID*RDS(on)max , ID =80A VGS =0V, VDS=25V, f=1MHz Symbol Conditions 79 - Gate Charge Chara.


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