Document
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Preliminary data
SPP80N04S2L-03 SPB80N04S2L-03
Feature
OptiMOS =Power-Transistor
Product Summary VDS RDS(on) ID
P-TO263-3-2
max. SMD version
• N-Channel • Enhancement mode • Logic Level •=175°C operating temperature • Avalanche rated • dv/dt rated
40 3.1 80
P-TO220-3-1
V mΩ A
Type SPP80N04S2L-03 SPB80N04S2L-03
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4261 Q67040-S4262
Marking 2N04L03 2N04L03
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C, 1) TC=100°C
A 80 80
Pulsed drain current
TC=25°C
ID puls EAS EAR
320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID =80 A , VDD=25V, RGS =25Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C
dv/dt
VGS Ptot Tj , Tstg
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-06-25
www.DataSheet4U.com
Preliminary data
SPP80N04S2L-03 SPB80N04S2L-03
Values min. typ. max. Unit
Thermal Characteristics Parameter Characteristics Symbol
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 2)
RthJC RthJA RthJA
-
-
0.5 62 62 40
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Symbol min. Values typ. max. Unit
Drain-source breakdown voltage
VGS =0V, ID =1mA
V(BR)DSS VGS(th) IDSS
40 1.2
1.6
2
V
Gate threshold voltage, VGS = VDS
ID =250µA
Zero gate voltage drain current
VDS =40V, VGS =0V, Tj=25°C VDS =40V, VGS =0V, Tj=125°C
µA 0.01 1 1 1 100 100 nA mΩ 3.5 3.2 2.7 2.4 4.5 4.2 3.4 3.1
Gate-source leakage current
VGS =20V, VDS=0V
IGSS RDS(on)
-
Drain-source on-state resistance
VGS =4.5V, ID =80A VGS =4.5V, ID =80A, SMD version
Drain-source on-state resistance3)
VGS =10V, ID=80A VGS =10V, ID=80A, SMD version
RDS(on)
-
1Current limited by bondwire; with a R thJC = 0.5 K/W the chip is able to carry ID = 217A and calculated with max. source pin temperature of 85°C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Diagrams are related to straight lead versions Page 2
2001-06-25
www.DataSheet4U.com
Preliminary data
SPP80N04S2L-03 SPB80N04S2L-03
Values min. typ. 158 5960 1890 460 24 83 60 80 max. 7450 2360 690 36 125 90 120 ns S pF Unit
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD =20V, VGS =10V, ID =80A, RG =1.1Ω VDS ≥2*ID*RDS(on)max , ID =80A VGS =0V, VDS=25V, f=1MHz
Symbol
Conditions
79 -
Gate Charge Chara.