SPB80N03S2L-06

www.DataSheet4U.com SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 5.9 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated Type SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4088 Q67042-S4089 Q67042-S4092 Marking 2N03L06 2N03L06 2N03L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 240 15 6 ±20 150 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=20A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 0.68 max. 1 62 40 Unit K/W Electrical Ch...