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SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
30 2.8 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67040-S4248 Q67040-S4259 Q67042-S4078
Marking 2N03L03 2N03L03 2N03L03
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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2003-05-09
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SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID=250µA
Zero gate voltage drain current
V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C
µA 0.01 1 1 1 100 100 nA mΩ 2.9 2.3 2.3 2 3.8 3.5 3.1 2.8
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=80A V GS=4.5V, I D=80A, SMD version
Drain-source on-state resistance 4)
V GS=10V, I D=80A V GS=10V, I D=80A, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 255A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2
2003-05-09
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SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =24V, ID =80A, VGS =0 to 10V VDD =24V, ID =80A
Symbol
Conditions min.
Values typ. 185 6150 2400 540 2.5 11.8 34 99 90 max. -
Unit
gfs Ciss Coss Crss RG td(on) tr td(off) tf
VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz
93 -
S
8180 pF 3190 810 17.7 51 148 135 Ω ns
VDD =15V, VGS =10V, ID =40A, RG =1.1Ω
-
19 57 166 2.9
26 86 220 -
nC
V(plateau) VDD = 24 V , ID =80A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =80A VR =15V, IF =lS , diF /dt=100A/µs
IS
TC=25°C
-
1 65 87
80 320 1.3 80 108
A
V ns nC
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SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 2 Drain current ID = f (T C) parameter: VGS≥ 10 V
90
SPP80N03S2L-03
1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V
320
SPP80N03S2L-03
W
A
240
70 60 50
P tot
200
160 40 120 30 80 20 40 10 0
0 0 20 40 60 80
100 120 140 160 °C 190
ID
0
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C
10
3 SPP80N03S2L-03
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPP80N03S2L-03
K/W
10
/I
D
0
A
=V D
S
t = 36.0µs p
Z thJC
10
-1
ID
10
2
RD
S(o n)
100 µs
10
-2
D = 0.50 0.20
1 ms -3
10
0.10 0.05
10
-4
single pulse
0.02 0.01
10
1
10
-1
10
0
10
1
V
10
2
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
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2003-05-09
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SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
SPP80N03S2L-03
5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs
SPP80N03S2L-03
190
Ptot = 300W
i h gf
VGS [V] a b 2.5 2.8 3.0 3.3 3.5 3.8 4.0 4.5 10.0
11
A
160 140
e
mΩ
d e
9
c d
R DS(on)
8 7 6 5 4
f g h i
ID
120 100 80 60
c d
e f g h i.