BD436

isc Silicon PNP Power Transistor BD436 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -32V(Min) ·Complement to type BD435 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -32 V VCES Collector-Emitter Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICBO Collector Cutoff Current VCB= -32V; IE= 0 ICEO Collector Cutoff Current VCE= -32V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -10mA; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -1V hFE-3 DC Current Gain IC= -2A; VCE= -1V fT Current-Gain—Bandwidth Product IC= -0.25A; VCE= -1V BD436 MIN TYP. M...