isc Silicon PNP Power Transistor
BD436
DESCRIPTION ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -32V(Min) ·Com...
isc Silicon
PNP Power
Transistor
BD436
DESCRIPTION ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -32V(Min) ·Complement to type BD435 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-32
V
VCES
Collector-Emitter Voltage
-32
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Pulse
-7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
36
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -1V
ICBO
Collector Cutoff Current
VCB= -32V; IE= 0
ICEO
Collector Cutoff Current
VCE= -32V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -10mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -1V
hFE-3
DC Current Gain
IC= -2A; VCE= -1V
fT
Current-Gain—Bandwidth Product IC= -0.25A; VCE= -1V
BD436
MIN TYP. M...