2SC3307

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION ·With TO-3PL package ·Excellent switching times : tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 10 15 3 150 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V ;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 10 10 MIN 800 900 2SC3307 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 ...