AOU456

www.DataSheet4U.com AOU456 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU456 is Pb-free (meets ROHS & Sony 259 specifications). AOU456L is a Green Product ordering option. AOU456 and AOU456L are electrically identical. TO-251 D Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <7 mΩ (VGS = 10V) RDS(ON) <10 mΩ (VGS = 4.5V) 193 18 Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 50 50 150 30 45 50 25 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A Steady-State Steady-State Symbol RθJA RθJC Typ 41 2.1 Max 50 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOU456 www.DataSheet4U.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=4....