AOU436

www.DataSheet4U.com AOU436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU436 is Pb-free (meets ROHS & Sony 259 specifications). AOU436L is a Green Product ordering option. AOU436 and AOU436L are electrically identical. Features VDS (V) = 30V ID = 57A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B, Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C Power Dissipation B TC=25°C TC=100°C TC=25°C TC=100°C B Maximum 30 ±20 57 40 100 30 143 50 25 -55 to 175 Units V V A A mJ W °C ID IDM IAR EAR PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State Symbol RθJA RθJL Typ 100 2 Max 125 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOU436 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A VDS=5V, ID=20A Min...