N-Channel Junction Silicon FET
Ordering number:EN3137
N-Channel Junction Silicon FET
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2SK1332
Low-Frequency General-Purpose Amplif...
Description
Ordering number:EN3137
N-Channel Junction Silicon FET
www.DataSheet4U.com
2SK1332
Low-Frequency General-Purpose Amplifier Applications
Applications
· Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits.
Package Dimensions
unit:mm 2058
[2SK1332]
0.425 0.2 0 to 0.1 0.6 0.9 0.3 3 2.1 1.250
Features
· Ultrasmall-sized package permitting 2SK1332applied sets to be made smaller and slimmer.
0.15
0.425
1 2 0.65 0.65 2.0
0.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings 30 –30 10 20 150 150 –55 to +150
Unit V V mA mA mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)GDS IG=–10µA, VDS=0 IGSS VGS=–20V, VDS=0 IDSS VGS(off) | yfs | VDS=10V, VGS=0V VDS=10V, ID=1µA VDS=10V, VGS=0V, f=1kHz Conditions Ratings min –30 –1.0 0.6* –0.2 2.5 –0.7 5.0 6.0* –2.5 typ max Unit V nA mA V mS
* : The 2SK1332 is classified by IDSS as follows (unit : mA) :
0.6 2 1.5 1.2 3 3.0 2.5 4 6.0
Continued on next page.
(Note) Marking : V IDSS rank : 2, 3, 4 For CP package version, use the 2SK303.
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