20N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPP20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A PG-TO220 2 P-TO220-3-1 123 Type SPP20N60S5 Package PG-TO220 Ordering Code Q67040-S4751 Marking 20N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 20 13 40 690 1 20 ±20 ±30 208 -55... +150 Unit A mJ A V W °C Rev. 2.8 Page 1 2009-12-01 SPP20N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 20 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA Tsold min. - Values typ. max. - 0.6 Unit K/W - - 62 - 35 - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Par...