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M02N60

Stanson Technology
Part Number M02N60
Manufacturer Stanson Technology
Description N Channel MOSFET
Published Mar 5, 2009
Detailed Description N Channel MOSFET com 2.0A M02N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Teminati...
Datasheet PDF File M02N60 PDF File

M02N60
M02N60

Overview
N Channel MOSFET com 2.
0A M02N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination.
Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.
Gate 2.
Drain 3.
Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 TO-220 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25£[) Thermal Resistance – Jun...


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