Document
Ordering number : ENN6989A
2SC5763
NPN Triple Diffused Planar Silicon Transistor
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2SC5763
Switching Regulator Applications
Features
• • • • •
Package Dimensions
unit : mm 2010C
[2SC5763]
10.2 3.6 5.1
2.7 6.3
High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.
4.5
1.3
18.0
5.6
1.2
14.0
0.8 1 2 3
2.7
15.1
0.4 1 : Base
2 : Collector 3 : Emitter
2.55
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C
2.55
SANYO : TO-220
Conditions
Ratings 700 400 8 7 14 1.75 55 150 --55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Conditions Ratings min typ max 10 10 Unit µA µA
Continued on next page.
* : The hFE1 of the 2SC5763 is classified as follows. Rank hFE1 M 20 to 40 N 30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0301 TS IM TA-3501 / 71801 TS IM TA-3234 No.6989-1/4
2SC5763
Continued from preceding page. www.DataSheet4U.com Parameter
Symbol hFE1 hFE2 hFE3 VCE(sat) VBE(sat) fT Cob V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=1mA IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=10V, IC=0.8A VCB=10V, f=1MHz IC=1mA, IE=0 IC=5mA, RBE=∞ IE=1mA, IC=0 IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 700 400 8 0.5 2.5 0.25 Ratings min 20* 10 10 0.8 1.5 17 80 V V MHz pF V V V µs µs µs typ max 50* Unit
DC Current Gain Collectoe-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT.