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C5763 Dataheets PDF



Part Number C5763
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC5763
Datasheet C5763 DatasheetC5763 Datasheet (PDF)

Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collect.

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Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C 2.55 SANYO : TO-220 Conditions Ratings 700 400 8 7 14 1.75 55 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Conditions Ratings min typ max 10 10 Unit µA µA Continued on next page. * : The hFE1 of the 2SC5763 is classified as follows. Rank hFE1 M 20 to 40 N 30 to 50 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0301 TS IM TA-3501 / 71801 TS IM TA-3234 No.6989-1/4 2SC5763 Continued from preceding page. www.DataSheet4U.com Parameter Symbol hFE1 hFE2 hFE3 VCE(sat) VBE(sat) fT Cob V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=1mA IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=10V, IC=0.8A VCB=10V, f=1MHz IC=1mA, IE=0 IC=5mA, RBE=∞ IE=1mA, IC=0 IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 700 400 8 0.5 2.5 0.25 Ratings min 20* 10 10 0.8 1.5 17 80 V V MHz pF V V V µs µs µs typ max 50* Unit DC Current Gain Collectoe-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Switching Time Test Circuit PW=20µs D.C.≤1% INPUT.


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