CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C816A3 Issued Date : 2003.04.15
Revised Date : Page No. : 1/4...
CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C816A3 Issued Date : 2003.04.15
Revised Date : Page No. : 1/4
Low VCE(SAT)
PNP Epitaxial Planar
Transistor
BTA1300A3
Description
The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications.
High DC current gain and excellent hFE linearity. HFE(1)=140—600(VCE=-1V,IC=-0.5A) HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A) Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).
Features
Symbol
BTA1300A3 TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP Pd Tj Tstg Limits -20 -20 -10 -6 -2 -5 750 150 -55~+150 Unit V V V V A mW °C °C
Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%.
BTA1300A3
CYStek Product Specification
CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C816A3 Issued Date : 2003.04.15
Revised Date : Page No. : 2/4
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -20 -10 -6 140 60 Typ. 120 140 50 Max. -0.1 -0.1 -0.5 -1.5 600 Unit V V V uA uA V V MHz pF Test Conditions IC=-50uA IC=-10mA IE=-1mA VCB=-20V VEB=-6V IC=-2A, IB=-50mA VCE=-1V, IC=-2A VCE=-1V, IC=-500mA VCE=-1V, IC=-4A VCE=-1V, IE=500mA, f=100MHz VCB=-10V, IE=0A,f=1...