FDP150N10

FDP150N10 N-Channel PowerTrench® MOSFET March 2013 FDP150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ Features RDS(on) = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D G G D S TO-220 MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient, Max. (Note 1) (Note 2) (Note 3) S FDP150N10 100 ±20 57 40 228 132 7.5 110 0.88 -5...