FDB150N10 — N-Channel PowerTrench® MOSFET
FDB150N10
N-Channel PowerTrench® MOSFET
100 V, 57 A, 15 mΩ
December 2013
Features
RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This ...
