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K3639 Dataheets PDF



Part Number K3639
Manufacturers NEC
Logo NEC
Description 2SK3639
Datasheet K3639 DatasheetK3639 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK) (TO-252) FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID =.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK) (TO-252) FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±64 ±256 40 1.0 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15967EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3639 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS www.DataSheet4U.com Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 32 A VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 32 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 32 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±100 UNIT µA nA V S 1.5 19 39 4.4 5.8 2400 970 350 13 14 71 22 2.5 Drain to Source On-state Resistance 5.5 8.5 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 64 A IF = 64 A, VGS = 0 V IF = 64 A, VGS = 0 V di/dt = 100 A/µs 45 7.6 11 0.96 40 35 Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL VGS PG. RG Wave Form D.U.T. VGS 0 10% IG = 2 mA VGS 90% RL VDD VDD PG. 90% 90% 10% 10% 50 Ω VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet D15967EJ3V0DS 2SK3639 TYPICAL CHARACTERISTICS (TA = 25°C) www.DataSheet4U.com DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - P.


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