Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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2SK3639
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK)
(TO-252)
FEATURES
• Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 ±20 ±64 ±256 40 1.0 150 −55 to +150
V V A A W W °C °C
Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1%
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Document No. D15967EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan
The mark
shows major revised points.
2002
2SK3639
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS www.DataSheet4U.com Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 32 A VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 32 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 32 A VGS = 10 V RG = 10 Ω
MIN.
TYP.
MAX. 10 ±100
UNIT
µA
nA V S
1.5 19 39 4.4 5.8 2400 970 350 13 14 71 22
2.5
Drain to Source On-state Resistance
5.5 8.5
mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 16 V VGS = 10 V ID = 64 A IF = 64 A, VGS = 0 V IF = 64 A, VGS = 0 V di/dt = 100 A/µs
45 7.6 11 0.96 40 35
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL VGS PG. RG
Wave Form
D.U.T. VGS
0 10%
IG = 2 mA VGS
90%
RL VDD
VDD
PG.
90% 90% 10% 10%
50 Ω
VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
2
Data Sheet D15967EJ3V0DS
2SK3639
TYPICAL CHARACTERISTICS (TA = 25°C)
www.DataSheet4U.com DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
dT - P.