BLF574

www.DataSheet4U.com BLF574 HF / VHF power LDMOS transistor Rev. 01 — 8 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information f (MHz) CW 225 108 VDS (V) 50 50 PL (W) 500 600 Gp (dB) 26.5 27.5 ηD (%) 70 73 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: N Average output power = 500 W N Power gain = 26.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Industrial, scientific and medical applications I Broadcast transmitter applications NXP Semiconductors www.DataSheet4U.com BLF574 HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF574 Description flanged balanced LDMOST ceramic package; 2 mounting ...