BLF571

www.DataSheet4U.com BLF571 HF / VHF power LDMOS transistor Rev. 01 — 11 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance f (MHz) CW 225 VDS (V) 50 PL (W) 20 Gp (dB) 27.5 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: N Average output power = 20 W N Power gain = 27.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Industrial, scientific and medical applications I Broadcast transmitter applications NXP Semiconductors www.DataSheet4U.com BLF571 HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF571 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT467C Type number 4. Limiting values Table 4....