〈Transistor〉
ISA2191AT2
www.DataSheet4U.com
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE D...
〈
Transistor〉
ISA2191AT2
www.DataSheet4U.com
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON
PNP EPITAXIAL TYPE OUTLINE DRAWING
Unit:mm
DESCRIPTION
ISA2191AT2 is a super mini package resin sealed silicon
PNP epitaxial
transistor,It is designed for low frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible.
1.21±0.1 0.79±0.1 0.25±0.02 ③ JEITA:─ ①:BASE ②:EMITTER ③:COLLECTOR
J I H F G
1.21±0.1
0.4 0.8 0.4
FEATURE
● Super-thin flat lead type package. t=0. 5mm ● Excellent linearly of DC forward current gain. ● Low collector to emitter saturation voltage
① ②
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify application
0.5±0.03
MAXIMUM RATINGS(Ta=25℃)
Symbol VCBO VEBO VCEO IC PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -6 -50 -150 125(※) 125 -55~125 Unit V V V mA mW ℃ ℃
A
ISAHAYA:T-USM TERMINAL CONNECTER
MARKING
Abbreviation for Kind hFE Item
7
B C D
F
E
※package mounted on 9×19×1mm glass-epoxy substrate.
A~F running No. G~J Month of manufacture
(Ta=25℃)
Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E saturation voltage Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob IC=-100μA, R V V V V
CB
Test conditions Min
BE
Limits Min 200 3.0 Min...