〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
www.DataSheet4U.com
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL T...
〈SMALL-SIGNAL
TRANSISTOR〉
ISA1989AU1
www.DataSheet4U.com
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON
PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE) OUTLINE DRAWING
1.6 0.4 0.8 0.4
Unit:mm
DESCRIPTION
ISA1989AU1 is a ultra super mini package resin sealed silicon
PNP epitaxial
transistor, It is designed for low frequency voltage application. .
0.5
① ② ③
1.6 1.0
FEATURE
● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max(@ I C=-30mA ,IB=-1.5mA) ●Excellent linearity of DC forward gain. 0.7 ●Super mini package for easy mounting
0.5
0.55
APPLICATION
For Hybrid IC,small type machine low frequency voltage Amplify application.
JEITA:SC-75A TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol . VCBO VCEO VEBO I
O
Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature
Ratings -50 -50 -6 -100 150 +150 -55~+150
Unit V V V mA mW ℃ ℃
0~0.1
MARKING
. TR
Pc Tj Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Symbol V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob I C=-100μA ,R V V V V
CB EB
Test conditions
BE
Limits Min -50 ※ 120 70 Typ 200 2.5 Max -0.5 -0.5 560 -0.3 -
0.15
0.3
Unit V μA μA
=∞
=-50V, I E=0mA
=-4V, I C=0m...