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ISA1989AU1

Isahaya Electronics

SMALL-SIGNAL TRANSISTOR

〈SMALL-SIGNAL TRANSISTOR〉 ISA1989AU1 www.DataSheet4U.com FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL T...


Isahaya Electronics

ISA1989AU1

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〈SMALL-SIGNAL TRANSISTOR〉 ISA1989AU1 www.DataSheet4U.com FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE) OUTLINE DRAWING 1.6 0.4 0.8 0.4 Unit:mm DESCRIPTION ISA1989AU1 is a ultra super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . 0.5 ① ② ③ 1.6 1.0 FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max(@ I C=-30mA ,IB=-1.5mA) ●Excellent linearity of DC forward gain. 0.7 ●Super mini package for easy mounting 0.5 0.55 APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. JEITA:SC-75A TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR MAXIMUM RATINGS(Ta=25℃) Symbol . VCBO VCEO VEBO I O Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -50 -50 -6 -100 150 +150 -55~+150 Unit V V V mA mW ℃ ℃ 0~0.1 MARKING . TR Pc Tj Tstg ELECTRICAL CHARACTERISTICS(Ta=25℃) Parameter C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Symbol V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob I C=-100μA ,R V V V V CB EB Test conditions BE Limits Min -50 ※ 120 70 Typ 200 2.5 Max -0.5 -0.5 560 -0.3 - 0.15 0.3 Unit V μA μA =∞ =-50V, I E=0mA =-4V, I C=0m...




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