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SPN3402 Dataheets PDF



Part Number SPN3402
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN3402 DatasheetSPN3402 Datasheet (PDF)

SPN3402 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3402 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small.

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SPN3402 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3402 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  30V/2.8A,RDS(ON)=58mΩ@VGS=10V  30V/2.3A,RDS(ON)=65mΩ@VGS=4.5V  30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design PIN CONFIGURATION ( SOT-23-3L ) PART MARKING 2020/02/17 Ver.5 Page 1 SPN3402 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN3402S23RGB SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN3402S23RGB : Tape Reel ; Pb – Free; Halogen - Free Part Marking A2 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±12 4.0 2.8 10 1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W 2020/02/17 Ver.5 Page 2 SPN3402 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±12V IDSS ID(on) RDS(on) VDS=24V,VGS=0.0V VDS=24V,VGS=0.0V TJ=55℃ VDS≧4.5V,VGS=10V VDS≧4.5V,VGS=4.5V VGS = 10V,ID=2.8A VGS =4.5V,ID=2.3A VGS =2.5V,ID=1.5A gfs VDS=4.5V,ID=2.8A VSD IS=1.25A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=15,VGS=4.5V ID≡2.0A VDS=15,VGS=0V f =1MHz VDD=15,RL=10Ω VGEN=10V,RG=3Ω Min. Typ Max. Unit 30 V 0.5 1.6 ±100 nA 1 uA 10 6 4 A 0.048 0.058 0.053 0.065 Ω 0.080 0.105 4.6 S 0.82 1.2 V 4.2 6 0.6 nC 1.5 350 55 pF 41 2.5 2.5 nS 20 4 2020/02/17 Ver.5 Page 3 SPN3402 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/02/17 Ver.5 Page 4 SPN3402 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/02/17 Ver.5 Page 5 SPN3402 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/02/17 Ver.5 Page 6 SPN3402 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/02/17 Ver.5 Page 7 .


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