SPN3055

SPN3055 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS  Power Management in Desktop Computer  DC/DC Converter  LCD Display inverter FEATURES  30V/12A,RDS(ON)=60mΩ@VGS=10V  30V/6A,RDS(ON)=90mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION ( TO-252-2L ) PART MARKING 2020/04/28 Ver.6 Page 1 SPN3055 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN3055T252RGB TO-252-2L ※ SPN3055T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN3055 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 10A , VD = 20V. )...