SHD217302A

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 317, REV www.DataSheet4U.com SHD217302A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS (on) œ Equivalent to IRF130 Series MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT @ TC = 100•C OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE DISSIPATION @ TC = 25•C THERMAL RESISTANCE, JUNCTION TO CASE ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID TOP/TSTG PD RthJC BVDSS VDS(ON) RDS(ON) VGS(th) gfs IDSS IGSS td(ON) tr td(OFF) tf VSD trr Ciss Coss Crss MIN. -55 100 2.0 4.6 0.14 2.8 7.0 9.5 42 22 25 1.0 650 240 44 TYP. MAX. –20 14 +150 96 1.3 100 0.16 4.0 250 1000 100 -100 14 63 33 38 2.5 250 UNITS Volts Amps •C Watts •C/W Volts Volts W Volts S(1/W) mA nA nsec Volts nsec pF ELECTRICAL CHARACTERISTICS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA DRAIN TO SOURCE ON-STATE VOLTAGE VGS = 10V, ID = 10A STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 20A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA FORWARD TRANSCONDUCTANCE VDS ˜ ID (ON) X, RDS (ON) Max., IDS = 0.6 X ID ZERO GATE VOLTAGE DRAIN CURRENT VDS = Max. Rating, VGS = 0V VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125•C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TURN ON DELAY TIME VDD = 50V, RISE TIME ID = 7.0A, TURN OFF DELAY TIME RG = 12W, FALL TIME VGS = 10V DIODE FORWARD VOLTAGE TC = 25•C, IS = 14A, VGS = 0V REVERSE RECOVERY TI...