Document
FDP2614 — N-Channel PowerTrench® MOSFET
October 2013
FDP2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
• RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A • Fast Switching Speed • Low Gate Charge • High Performance Trench technology for Extremely Low
RDS(on) • High Power and Current Handing Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Appliances
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS VGS ID
IDM EAS dv/dt PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C) - Derate above 25°C
(Note 1) (Note 2) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
1
FDP2614 Rev. C3
G
S
FDP2614
200 ± 30 62 39.3 see Figure 9 145 4.5 260 2.1 -55 to +150 300
FDP2614
0.48 62.5
Unit
V V A A A mJ V/ns W W/°C °C °C
Unit
°C/W °C/W
www.fairchildsemi.com
FDP2614 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking
FDP2614
Device
FDP2614
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
200
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
ID = 250μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
--
VDS = 200V, VGS = 0V, TJ = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
RDS(on)
Static Drain-Source On-Resistance
VGS = 10V, ID = 31A
--
gFS
Forward Transconductance
VDS = 10V, ID = 31A
--
Dynamic Characteristics
Ciss
Input Capacitance
--
Coss
Output Capacitance
VDS = 25V, VGS = 0V f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on) tr td(off)
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 100V, ID = 62A VGS = 10V, RGEN = 25Ω
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 100V, ID = 62A VGS = 10V
Drain-Source Diode Characteristics and Ma.