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FDP2614 Dataheets PDF



Part Number FDP2614
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FDP2614 DatasheetFDP2614 Datasheet (PDF)

FDP2614 — N-Channel PowerTrench® MOSFET October 2013 FDP2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features • RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A • Fast Switching Speed • Low Gate Charge • High Performance Trench technology for Extremely Low RDS(on) • High Power and Current Handing Capability • RoHS Compliant General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-stat.

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FDP2614 — N-Channel PowerTrench® MOSFET October 2013 FDP2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features • RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A • Fast Switching Speed • Low Gate Charge • High Performance Trench technology for Extremely Low RDS(on) • High Power and Current Handing Capability • RoHS Compliant General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. ©2007 Fairchild Semiconductor Corporation 1 FDP2614 Rev. C3 G S FDP2614 200 ± 30 62 39.3 see Figure 9 145 4.5 260 2.1 -55 to +150 300 FDP2614 0.48 62.5 Unit V V A A A mJ V/ns W W/°C °C °C Unit °C/W °C/W www.fairchildsemi.com FDP2614 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP2614 Device FDP2614 Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions Min Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 200 ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V -- VDS = 200V, VGS = 0V, TJ = 125°C -- IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 31A -- gFS Forward Transconductance VDS = 10V, ID = 31A -- Dynamic Characteristics Ciss Input Capacitance -- Coss Output Capacitance VDS = 25V, VGS = 0V f = 1.0MHz -- Crss Reverse Transfer Capacitance -- Switching Characteristics td(on) tr td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 100V, ID = 62A VGS = 10V, RGEN = 25Ω tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 100V, ID = 62A VGS = 10V Drain-Source Diode Characteristics and Ma.


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