INCHANGE Semiconductor
www.DataSheet4U.com
isc Product Specification
isc N-Channel MOSFET Transistor
60NF06
FEATURES...
INCHANGE Semiconductor
www.DataSheet4U.com
isc Product Specification
isc N-Channel MOSFET
Transistor
60NF06
FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRIPTION Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements . APPLICATIONS ·High-efficiency DC-DC converters ·UPS and motor control ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 60 ±20 60 240 110 175 -65~175 UNIT V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.36 62.5 UNIT ℃/W ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc Product Specification
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
60NF06
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
60
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V Ω
RDS(on) IGSS
Drain-Source On-Resistance
VGS= 10V; ID= 30A VGS= ±20V;...