X0402MF

isc Thyristors INCHANGE Semiconductor X0402MF FEATURES ·IT(RMS)=4A ·VDRM=600V ·Low IGT<200uA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Highly sensitive triggering levels ·For capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(AV) Repetitive peak reverse voltage On-state current 180°conduction angle ITSM PG(AV) Non-repetitive surge peak on-state current t= 20ms Average gate power dissipation Tj = 125℃ Tj Junction temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, VRM=VRRM, ,Tj=125℃ IDRM Repetitive peak off-state current VDM=VDRM, VDM=VDRM ,Tj=125℃ VTM On-state voltage ITM= 8A, tp = 380 µs IGT Gate-trigger current VD=12V, RL=140Ω, RGK=1KΩ VGT Gate-trigger voltage VD=12V, RL=140Ω, RGK=1KΩ IH Holding current VD=24V, RGK=1KΩ, ITM=4A MIN 600 600 4 30 0.2 125 -40 to + 150 UNIT V V A A W ℃ MIN MAX UNIT 5 200 μA 5 200 μA 1.8 V 200 μA 0.8 V 6 mA isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor X0402MF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notific...