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MSAFA1N100D Dataheets PDF



Part Number MSAFA1N100D
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description Fast MOSFET Die
Datasheet MSAFA1N100D DatasheetMSAFA1N100D Datasheet (PDF)

2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 www.DataSheet4U.com MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DESCRIPTION: • • • N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq.

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2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 www.DataSheet4U.com MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DESCRIPTION: • • • N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq. Switching Ultra Low Leakage Current UIS rated Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix FEATURES: • • • • • • • MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @ T C = 25° C Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 ±20 1 .8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps mJ mJ °C STATIC ELECTRICAL CHARACTERISTICS: SYMBO L BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37° C Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25° C Drain – Source On-State Resistance (VGS = 10V, ID = ID1, T J = 25° C) Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, T J= 37° C) Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, T J= 25° C) Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, T J= 60° C) Drain – Source On-State Resistance (VGS = 7V, ID = ID1, T J = 125° C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 25° C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 37° C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 125° C) Gate-Source Leakage Current (VGS = ±20V, VCE =0V) Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37° C Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125° C 10 500 1 100 ±100 2 MIN 1000 3.4 3.5 12.5 12.5 11.5 15 23.5 10 4.5 13.5 TYP MAX UNIT Volts Volts Volts ohm ohm ohm ohm ohm uA uA uA nA nA nA MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified MSAFA1N100D www.DataSheet4U.com Fast MOSFET Die for Implantable Cardio Defibrillator Applications DYNAMIC CHARACTERISTICS: SYMBOL Ciss Coss Crss Qg Qgs Qgd CHARACTERISTIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ¯ Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CONDITIONS VGS = 0V VDS = 25V f = .


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