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EC10QS09 Dataheets PDF



Part Number EC10QS09
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description Schottky Barrier Diode
Datasheet EC10QS09 DatasheetEC10QS09 Datasheet (PDF)

www.DataSheet4U.com SBD Type : EC10QS09 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx .

  EC10QS09   EC10QS09


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www.DataSheet4U.com SBD Type : EC10QS09 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight:0.06g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 20 0.92 1.0 EC10QS09 90 Ta=25 °C *1 Ta=55 °C *2 50Hz Half Sine Wave Resistive Load Unit V A A A °C °C 1.57 50Hz Half Sine Wave,1cycle Non-repetitive -40 to +150 -40 to +150 Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 1.0A Min. Typ. Max. 0.5 0.85 157 108 Unit mA V °C /W Rth(j-a) Junction to Ambient *1 *2 *1 Glass Epoxy Substrate Mounted *2 Alumina Substrate Mounted Soldering Lands=2x2mm,Both Sides www.DataSheet4U.com EC10QS_ OUTLINE DRAWING (Dimensions in mm) www.DataSheet4U.com FORWARD CURRENT VS. VOLTAGE EC10QS09 5 INSTANTANEOUS FORWARD CURRENT (A) 2 Tj=25°C Tj=150°C 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION EC10QS09 D.C. 1.2 AVERAGE FORWARD POWER DISSIPATION (W) 1.0 RECT 180° 0.8 HALF SINE WAVE RECT 120° 0.6 RECT 60° 0.4 0.2 0 0 0.4 0.8 1.2 1.6 AVERAGE FORWARD CURRENT (A) www.DataSheet4U.com PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C 5 EC10QS09 PEAK REVERSE CURRENT (mA) 2 1 0 20 40 60 80 100 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION EC10QS09 D.C. 0.35 AVERAGE REVERSE POWER DISSIPATION (W) 0.30 RECT 300° 0.25 RECT 240° 0.20 0.15 RECT 180° 0.10 HALF SINE WAVE 0.05 0 0 20 40 60 80 100 REVERSE VOLTAGE (V) 0° 180° www.DataSheet4U.com θ CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE G la ss -E pox y Su bstra te M ounted( Lan d= 2×2m m ),V RM =9 0V EC10QS09 1.6 1.4 D.C. AVERAGE FORWARD CURRENT (A) 1.2 1.0 0.8 RECT 60°. HALF SINE WAVE RECT 120°. RECT 180°. 0.6 0.4 0.2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE Alu min a S ub strate M ounted( Land =2 ×2m m ),V RM =90 V EC10QS09 D.C. 1.6 AVERAGE FORWARD CURRENT (A) 1.2 RECT 180° HALF SINE WAVE RECT 120°. 0.8 RECT 60°. 0.4 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) www.DataSheet4U.com SURGE CURRENT RATINGS f=50Hz,Half Sine Wave,Non-Repetitive,No Load EC10QS09 20 SURGE FORWARD CURRENT (A) 16 12 8 4 0.02s I FSM 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue 100 EC10QS09 JUNCTION CAPACITANCE (pF) 50 20 10 0.5 1 2 5 10 20 50 100 REVERSE VOLTAGE (V) .


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