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16N50C3 Dataheets PDF



Part Number 16N50C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet 16N50C3 Datasheet16N50C3 Datasheet (PDF)

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N50C3 SPI16N50C3 SPA16N50C3 Package PG-TO220 PG-T.

  16N50C3   16N50C3



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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N50C3 SPI16N50C3 SPA16N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4583 Q67040-S4582 SP000216351 Marking 16N50C3 16N50C3 16N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 16 161) 10 101) 48 48 460 460 0.64 0.64 16 16 ±20 ±20 ±30 ±30 160 34 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 16 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Symbol dv/dt Value 50 Unit V/ns Symbol RthJC RthJC_FP RthJA RthJA FP Tsold Values min. typ. max. - - 0.78 - - 3.7 - - 62 - - 80 - - 260 Unit K/W °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values min. typ. max. Drain-source breakdown voltage Drain-Source avalanche breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA V(BR)DS VGS=0V, ID=16A 500 - 600 - Gate threshold voltage VGS(th) ID=675µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Tj=25°C - 0.1 1 Tj=150°C - - 100 Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) VGS=20V, VDS=0V VGS=10V, ID=10A Tj=25°C Tj=150°C - - 100 - 0.25 0.28 - 0.68 - Gate input resistance RG f=1MHz, open drain - 1.5 - Unit V µA nA Ω Rev. 3.2 page 2 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions min. Characteristics Transconductance gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related VDS≥2*ID*RDS(on)max, ID=10A VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V to 400V - - - Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=380V, VGS=0/10V, ID=16A, RG=4.3Ω - Values typ. max. 14 - 1600 800 30 64 - 124 - 10 850 8- Unit S pF ns Gate Charge Characteristics Gate to source charge Qgs VDD=380V, ID=16A Gate to drain charge Gate charge total Qgd Qg VDD=380V, ID=16A, VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=16A - 7 - nC - 36 - 66 - - 5 -V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak


TYN204 16N50C3 KOE1007


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